研究目的
Investigating the effect of annealing temperature on the morphological, structural, and optical properties of CdSe thin films deposited by electron beam evaporation technique.
研究成果
The study demonstrates that annealing temperature significantly affects the structural and optical properties of CdSe thin films. The grain size increases with temperature, and the films exhibit a direct band gap nature. The findings suggest that the properties of CdSe thin films can be tuned by controlling the annealing temperature, which is crucial for applications in optoelectronic devices.
研究不足
The study is limited to the effects of annealing temperature on CdSe thin films up to 300°C. The process requires operation in a vacuum, which may limit scalability and increase cost.
1：Experimental Design and Method Selection:
CdSe thin films were deposited on glass substrates using electron beam evaporation technique and annealed at temperatures ranging from 100°C to 300°C.
2：Sample Selection and Data Sources:
Spectroscopically pure Cadmium selenide (
3：99%) was used as the source material. List of Experimental Equipment and Materials:
HINDHI-VAC vacuum unit (model: 12A4D), electron beam power supply (model: EBG-PS-3K), scanning electron microscope (SEM), X-ray diffraction (XRD), ultraviolet-visible (UV-Vis) spectroscopy, and Fourier transform infrared spectroscopy.
4：Experimental Procedures and Operational Workflow:
Films were deposited under a vacuum of 10-6 Torr with an accelerating voltage of 5 kV and a power density of ~
5：5 kW/cmThe rate of evaporation was 5 nm/s. Data Analysis Methods:
Grain sizes, dislocation density, strain, and lattice constant were calculated from XRD data. Optical properties were analyzed using UV-Vis spectroscopy.
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