研究目的
Investigating the origin of metal deposition-threshold time (tth) on colorless photochromic diarylethene (DAE) surfaces and elucidating the mechanism of metal nucleation on these surfaces.
研究成果
Metal deposition on colorless DAE surfaces starts at a specific time (tth) due to the increase in nucleation sites from chemical reactions between metal atoms and surface molecules. Controlling evaporation time or recovery can prevent unwanted metal deposition, which is crucial for applications in organic electronics.
研究不足
The study was limited to Mg and Pb metals and did not explore other metals. The chemical reactants between metal atoms and DAE molecules were too small in amount to be detected directly, requiring indirect methods for confirmation.
1：Experimental Design and Method Selection:
The study used selective metal-vapor deposition on photochromic DAE surfaces to investigate the nucleation mechanism of metal-vapor atoms. The methodology included the use of quartz crystal microbalances (QCMs) for in-situ monitoring of metal deposition.
2：Sample Selection and Data Sources:
Amorphous DAE films were prepared and subjected to UV irradiation to create isomerization patterns. Metal-vapor atoms (Mg and Pb) were evaporated onto these surfaces under controlled conditions.
3：List of Experimental Equipment and Materials:
Two QCMs (In?con XTM/2 and SQM-160), gold-coated crystal oscillator (6 MHz), photomask (λ = 365 nm), and metal evaporation sources (Mg and Pb).
4：Experimental Procedures and Operational Workflow:
The experiment involved preparing DAE films, creating isomerization patterns with UV irradiation, evaporating metal atoms onto the films, and monitoring the deposition process using QCMs.
5：Data Analysis Methods:
The quantity of metal deposited was indicated as a frequency shift (Hz) measured by the QCMs. The relationship between deposition quantity and evaporation time was analyzed to determine tth.
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