研究目的
Investigating the resistive switching characteristics of sputtered deposited molybdenum disulphide (MoS2) thin film in Cu/MoS2/W2N stack configuration for ReRAM application.
研究成果
The Cu/MoS2/W2N memory device exhibits excellent resistance ratio, good endurance, and long non-volatile retention, suggesting its potential for next-generation non-volatile ReRAM applications. The use of W2N as a bottom electrode enhances the device's performance.
研究不足
The study focuses on the resistive switching properties of MoS2 thin films with W2N bottom electrode, but does not explore the scalability of the device or the impact of environmental factors on performance.
1：Experimental Design and Method Selection:
The study involves the fabrication of Cu/MoS2/W2N stack configuration using DC magnetron sputtering technique to investigate resistive switching properties.
2：Sample Selection and Data Sources:
Highly pure commercial targets of W, MoS2, and Cu were used. The W2N bottom electrode was deposited on Si (100) substrate, followed by MoS2 thin film and Cu top electrodes.
3：List of Experimental Equipment and Materials:
Bruker advanced diffractometer (D-8) for crystallinity and phase formation, FE-SEM (FEI Quanta 200F) for cross-sectional imaging, Keithley 4200 SCS for electrical properties.
4：Experimental Procedures and Operational Workflow:
The deposition process involved setting cathode discharge DC power and maintaining deposition pressure. Electrical measurements were conducted with DC voltage sequence applied to Cu top electrode while W2N bottom electrode was grounded.
5：Data Analysis Methods:
The study analyzed resistive switching properties, conduction mechanisms, and reliability through endurance and retention tests.
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