研究目的
To accurately extract the electrical resistance parameters of the planar metal-semiconductor ohmic contacts using a novel electrode-pair layout scheme.
研究成果
The proposed EPM scheme provides a more accurate method to extract electrical parameters in semiconductor ohmic contacts by distinguishing the variance of sheet resistance underneath the contact after high-temperature annealing. It also demonstrates that a relatively narrow electrode width will contribute most of the current conducting, assisting engineers for a better electrode layout design.
研究不足
The conventional TLM scheme cannot distinguish the variance of sheet resistance underneath the annealed contact, leading to ineluctable error of specific contact resistance.
1：Experimental Design and Method Selection:
The proposed model layout features a series of separated electrode pairs with the same electrode distance but various widths. An equivalent circuit for contact resistance composition is set up to specify the contribution of each resistance component.
2：Sample Selection and Data Sources:
GaN-based semiconductors were employed to form ohmic contacts to confirm the validity of the proposed EPM scheme.
3：List of Experimental Equipment and Materials:
Single crystal Al
4：26Ga74N (25nm)/i-GaN (5μm) heterostructure was grown on 2-inch Si substrate by MOCVD with an Aixtron close-coupled showerhead system. Experimental Procedures and Operational Workflow:
Mesa patterns were formed to block the leakage current by using Cl2/BCl3 plasma ICP etching, followed by the formation of the electrode pair ohmic contact by evaporating Ti/Al/Ni/Au (20/120/45/55 nm) metal stack and annealing at 875℃ for 30s in N
5：Data Analysis Methods:
The electrical contact parameters were calculated and compared between the proposed EPM scheme and the conventional TLM scheme.
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