研究目的
To study the temperature-dependent behavior of GaN HEMTs under extreme operating conditions, including high frequencies up to 65 GHz and high ambient temperatures up to 200°C, and to assess the impact of thermal effects on device performance.
研究成果
The study demonstrates significant degradation in GaN HEMT performance with increasing temperature, as evidenced by reductions in transconductance, intrinsic open-circuit voltage gain, and unity current gain cut-off frequency. The findings provide valuable insights into the thermal behavior of GaN HEMTs under extreme operating conditions.
研究不足
The study is limited to a specific GaN HEMT technology and may not be directly applicable to other technologies or device geometries. The analysis is based on small-signal measurements and may not fully capture large-signal behavior.
1：Experimental Design and Method Selection
The study involves characterizing a large 0.25-μm GaN HEMT with a gate periphery of 1.5 mm under high dissipated power of 5.1 W. Scattering parameters are measured at high frequencies up to 65 GHz and at high ambient temperatures up to 200°C. An equivalent circuit is analytically extracted to assess the impact of thermal effects on device performance.
2：Sample Selection and Data Sources
The device under test is a multi-finger AlGaN/GaN HEMT on SiC with a gate length of 0.25 μm and a gate width of 10x150 μm, based on the GH25-10 technology by United Monolithic Semiconductors (UMS).
3：List of Experimental Equipment and Materials
Vector network analyzer (VNA) for S-parameter measurements, GaN HEMT device.
4：Experimental Procedures and Operational Workflow
S-parameter measurements are made from 0.2 to 65 GHz with a step of 200 MHz at four ambient temperatures: 35°C, 90°C, 145°C, and 200°C. The device is biased by imposing the drain-source voltage (VDS) and the drain current (ID) to maintain constant dissipated power during measurements.
5：Data Analysis Methods
An equivalent circuit is extracted from the measurements to analyze the impact of temperature on device performance. The analysis includes the evaluation of main RF figures of merit such as transconductance (gm), output conductance (gds), and intrinsic capacitances.
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