研究目的
To present a novel stabilization scheme to prevent parametric oscillations in power amplifiers using the inductive degeneration technique for the first time.
研究成果
The proposed stabilization technique successfully prevented parametric oscillations in the designed MMIC HPA, achieving a saturated output power of 35 W, 29% power added efficiency, and a large-signal gain of 26 dB. The inductive degeneration technique was effectively used for the first time in this context.
研究不足
The study was limited to simulation results as the NRC discontinued support for the GaN150 technology before fabrication could occur.
1：Experimental Design and Method Selection:
The study employed the inductive degeneration technique for stabilizing high-power amplifiers. A 0.15 μm AlGaN/GaN MMIC high power amplifier operating at 5.8 GHz was designed.
2：15 μm AlGaN/GaN MMIC high power amplifier operating at 8 GHz was designed.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: The design was based on the GaN150 technology provided by the National Research Council of Canada (NRC).
3：List of Experimental Equipment and Materials:
The study utilized AlGaN/GaN HEMT technology, with specific parameters such as gate width and length optimized for performance.
4：Experimental Procedures and Operational Workflow:
The amplifier was designed in a three-stage configuration with specific matching networks and stabilization circuits to prevent various types of oscillations.
5：Data Analysis Methods:
Harmonic balance simulations coupled with electromagnetic simulations were used to analyze the amplifier's performance.
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