研究目的
Investigating the growth of high-quality Si-doped AlN films on sapphire (0001) substrates using pulsed sputtering deposition (PSD) and their structural and electrical properties.
研究成果
The combination of PSD and high-temperature annealing enables the growth of high-quality Si-doped AlN films on sapphire with excellent n-type conductivity and electron mobility, demonstrating the potential of PSD for optoelectronic applications.
研究不足
The study focuses on the growth and properties of Si-doped AlN on sapphire substrates, with potential limitations in scalability and cost-effectiveness for mass production. The high-temperature annealing process may also introduce challenges in maintaining surface quality.
1：Experimental Design and Method Selection:
The study employed pulsed sputtering deposition (PSD) for the growth of Si-doped AlN films on sapphire (0001) substrates, followed by a high-temperature annealing process to improve crystalline quality.
2：Sample Selection and Data Sources:
2-inch sapphire (0001) substrates were used. After cleaning, a 300-nm-thick AlN layer was epitaxially grown, annealed under N2 atmosphere at 1700°C, and then a
3：2-μm-thick Si-doped AlN layer was grown. List of Experimental Equipment and Materials:
PSD-growth chamber, furnace for annealing, atomic force microscopy (AFM), X-ray rocking curves (XRCs), transmission electron microscopy (TEM), Hall-effect measurement system (ResiTest 8400).
4：0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Surface cleaning, AlN layer deposition, high-temperature annealing, Si-doped AlN layer deposition, surface and structural characterization, electrical property measurement.
5：Data Analysis Methods:
AFM and XRC for surface and structural analysis, TEM for dislocation density measurement, Hall-effect measurements for electrical properties.
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