研究目的
Investigating the spin pumping phenomenon in Bi2Se3/CoFeB bilayers and the potential of topological insulators to replace heavy metals in spintronics applications.
研究成果
The study successfully demonstrated the fabrication of Bi2Se3 thin films using electron beam evaporation and investigated the spin pumping effect in Bi2Se3/CoFeB bilayers. The major contribution to the measured voltage was from spin pumping induced ISHE, indicating the potential of Bi2Se3 as a replacement for heavy metals in spintronics applications.
研究不足
The study is limited by the quality of the Bi2Se3 thin films and the interfaces, which could affect the spin pumping efficiency. The method of preparation, while cheaper, may not achieve the same quality as MBE or mechanical exfoliation.
1：Experimental Design and Method Selection:
The study involved the fabrication of Bi2Se3 thin films using electron beam evaporation on Si (100) substrate and investigating the spin pumping phenomenon in Bi2Se3/CoFeB bilayers.
2：Sample Selection and Data Sources:
Bi2Se3 thin films were prepared and characterized using XRD, XRR, AFM, SEM, and EDX. Transport and magnetotransport measurements were performed.
3：List of Experimental Equipment and Materials:
Electron beam evaporation system, X-ray diffraction (XRD), X-ray reflectivity (XRR), atomic force microscopy (AFM), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM).
4：Experimental Procedures and Operational Workflow:
The films were characterized for crystalline quality, thickness, interface roughness, topography, morphology, and composition analysis. Spin pumping and ISHE were investigated using ferromagnetic resonance spectroscopy.
5：Data Analysis Methods:
The data were analyzed using fitting procedures described in the literature to evaluate the damping constant and contributions from spin pumping and other effects.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
