研究目的
Investigating the effects of cap layers thickness on gate leakage current in AlGaN/GaN capped pseudomorphic high electron mobility transistors (PHEMT) and optimizing the structure to minimize gate leakage current.
研究成果
The modified normally-On AlGaN/GaN capped PHEMT shows significant improvement in Off-state gate leakage current, resulting in an increase in IOn/IOff ratio. The optimal thicknesses for Si3N4 layer and GaN cap layer are found to be 10 nm and 24 nm, respectively, leading to a higher than 3 orders of magnitude increase in On/Off current ratio compared to the prior non-optimal structure.
研究不足
The study is based on simulations and may not account for all real-world variations and manufacturing imperfections. The optimization is focused on minimizing gate leakage current, and other performance metrics may require further optimization.
1：Experimental Design and Method Selection:
The study uses Atlas/Silvaco Simulator for device simulation. The proposed structure includes an In0.15Ga0.85N layer between the AlN spacer and GaN buffer layers, with optimization of different layers dimensions.
2：15Ga85N layer between the AlN spacer and GaN buffer layers, with optimization of different layers dimensions.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: The study compares the proposed structure with a prior non-optimal AlGaN/GaN capped HEMT structure.
3：List of Experimental Equipment and Materials:
Atlas/Silvaco Simulator is used for simulations.
4：Experimental Procedures and Operational Workflow:
Simulations are carried out using the drift-diffusion (DD) transport model with quantum correction models including Van dort’s model and Selberherr’s impact ionization model.
5：Data Analysis Methods:
The study analyzes the output characteristics, energy band diagram, electric field, and transconductance to evaluate the performance of the proposed structure.
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