研究目的
To calibrate the linewidth or critical dimension (CD) of a nanoscale line pattern using a metrological atomic force microscope with a tip-tilting mechanism (tilting-mAFM) and verify its accuracy.
研究成果
The SI-traceable CD measurements of a nanoscale line pattern with vertical sidewalls were obtained by a tilting-mAFM. The expanded uncertainty of 1.0 nm is comparable to the uncertainties of CD measured by other NMIs using CD-AFM with a flared tip. Evaluation using En number demonstrated the satisfactory performance of CD calibration.
研究不足
The main uncertainty components in this calibration procedure are related to the stitching precision, tip wear, and estimation of the effective tip width. The precision of the CD measurement is almost similar to that of CD-AFM metrology using a flared tip.
1：Experimental Design and Method Selection:
The tilting-mAFM performs two measurements on each side of the line pattern, and two datasets are stitched together to reconstruct the complete shape of the line pattern. CD is measured based on this pattern.
2：Sample Selection and Data Sources:
A linewidth standard with a subnanometer-scale uncertainty was used as a target sample to verify the CD calibration procedure.
3：List of Experimental Equipment and Materials:
An OMCL-AC200TS (Olympus Corp.) cantilever probe with a silicon tip was used to perform the measurements.
4：Experimental Procedures and Operational Workflow:
The line pattern was measured over a scanning area of 500 nm × 400 nm with 125 lines × 500 points. The sample was rotated by 180° to measure both sides with the tilting-mAFM.
5：Data Analysis Methods:
The two datasets are stitched together using the iterative closest point (ICP) algorithm to reconstruct the shape of the line pattern and determine the CD.
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