1：Experimental Design and Method Selection:

In/Ga elements were doped in GaSb/InSb crystals respectively, and their thermoelectric performances were studied. The crystals were synthesized by melt solidification process using high pure, 6N grade In, Ga and Sb elements. Induction heating furnace was used to grow the crystals in a quartz crucible under hydrogen flowing atmosphere.

2：Sample Selection and Data Sources:

GaSb and InSb crystals doped heavily (1 × 1020 and 1 × 1021/cm3) with In and Ga elements respectively, were synthesized.

3：List of Experimental Equipment and Materials:

Induction heating furnace, quartz crucible, high pure, 6N grade In, Ga and Sb elements, Rigaku RINT X-ray diffractometer, JEOL-JXA 8530F field emission electron probe micro analyser, ESCA 3400 electron spectrometer, Ulvac Rico ZEM 3 system, NETZSCH-LFA 447 nanoflash instrument.

4：Experimental Procedures and Operational Workflow:

The furnace was heated up to 720 and 650 °C for the growth of In doped GaSb (GaSb:In) and Ga doped InSb (InSb:Ga) crystals, respectively. The holding time at the growth temperature was 2 h and, the heating and cooling rates of the furnace were fixed to be 10 °C/min for all the experiments. After the growth, the crystals were cut and polished using SiC and alumina abrasives for the analysis process.

5：Data Analysis Methods:

The structural analysis was done by X-ray diffraction (XRD). The compositional distribution was analysed by energy dispersive X-ray (EDX) mapping of the crystals. The binding energies of the elements were analysed using ESCA 3400 electron spectrometer. Ulvac Rico ZEM 3 system was used to measure electrical resistivity and Seebeck co-efficient. The thermal conductivity was measured by laser flash method.