研究目的
Investigating the effects of ultraviolet photon irradiation and subsequent thermal treatments on solution-processed amorphous indium gallium zinc oxide thin films.
研究成果
The study concludes that oxygen vacancies in solution-processed amorphous IGZO thin films act as trapping centers or scattering centers of electrons, affecting the drain current in thin film transistors. The reversible change in drain current with UV irradiation and thermal treatment suggests potential applications of IGZO films as UV sensors.
研究不足
The study is limited to solution-processed amorphous IGZO thin films sintered at temperatures up to 350 ?C. The effects of UV irradiation and thermal treatments may vary with different fabrication methods or materials.
1：Experimental Design and Method Selection:
The study involved the fabrication of IGZO thin films using a solution process, followed by exposure to UV photons and thermal treatments. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectroscopy were used to analyze the films.
2：Sample Selection and Data Sources:
IGZO thin films were fabricated on p-type silicon single crystal and silica glass plate substrates.
3：List of Experimental Equipment and Materials:
Equipment included a Xe2 excimer lamp for UV irradiation, a hot plate for thermal treatments, a spin-coater for film fabrication, and spectrometers for XPS and PL measurements. Materials included nitrate hydrates of In, Ga, and Zn, and solvents for the precursor solution.
4：Experimental Procedures and Operational Workflow:
The process involved coating the substrate with the IGZO precursor solution, sintering, UV irradiation, and thermal treatment, followed by characterization.
5：Data Analysis Methods:
The XPS spectra were analyzed by peak separation with Gaussian curves, and PL spectra were analyzed to understand the effects of UV irradiation and thermal treatments on oxygen vacancies.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容-
Xe2 excimer lamp
UER20-172
Ushio
UV irradiation source
-
diffractometer
Rint-Ultima III
Rigaku
Measuring grazing incidence X-ray diffraction (GIXRD) patterns
-
field emission scanning electron microscope
Hitachi S4500S
Hitachi
Obtaining top-view and cross-sectional images of the IGZO films
-
spectrometer
JPS-9200TR
JEOL
Measuring X-ray photoelectron spectra (XPS)
-
spectrometer
UV-3100PC
Shimadzu
Measuring optical absorption spectra
-
semiconductor parameter analyzer
Keithley 4200-SCS
Keithley
Measuring transfer characteristics of the TFT
-
spin-coater
1H-D7
Mikasa
Coating the substrate with the IGZO precursor solution
-
hot plate
HP-2SA
As One
Thermal treatment of the samples
-
登录查看剩余6件设备及参数对照表
查看全部
