研究目的
Investigating the effects of X-ray and proton irradiation on MoS2-based tunnel junctions with different interlayer dielectrics (Al2O3, h-BN, and HfO2) for potential use in radiation-tolerant, ultimately-scaled tunnel FETs.
研究成果
MoS2-based tunnel junctions with HfO2 interlayer dielectrics are highly resistant to both X-ray and proton irradiation, making them promising candidates for use in radiation-tolerant, ultimately-scaled tunnel FETs for future space applications. Devices with Al2O3 and h-BN interlayers show increased conduction current after proton irradiation due to displacement-damage-induced defects, while HfO2-based devices remain stable.
研究不足
The study focuses on the effects of X-ray and proton irradiation on MoS2-based tunnel junctions with specific interlayer dielectrics. The findings may not be directly applicable to other types of radiation or materials. The experimental conditions (e.g., irradiation doses) may not fully represent all possible space environments.
1：Experimental Design and Method Selection:
The study involved fabricating MoS2-based tunnel junctions with different interlayer dielectrics (Al2O3, h-BN, and HfO2) and subjecting them to X-ray and proton irradiation to study their radiation responses.
2：Sample Selection and Data Sources:
MoS2 films were synthesized directly onto bottom Au contacts using a low-temperature plasma-assisted synthesis technique. Three different interlayer tunnel barriers were examined.
3：List of Experimental Equipment and Materials:
A semiconductor parameter analyzer (HP 4156A) was used for electrical measurements. Devices were irradiated with 10-keV X-rays or
4：8 MeV protons. Experimental Procedures and Operational Workflow:
Devices were fabricated, annealed, and then subjected to electrical measurements before, during, and after irradiation.
5：Data Analysis Methods:
The dominant charge transport mechanism was analyzed using the Fowler-Nordheim tunneling equation. Density-functional-theory calculations were performed to understand the defect microstructure.
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