研究目的
Investigating the effect of deposition rate on the growth mechanism of microcrystalline silicon thin films using very high frequency PECVD.
研究成果
The growth exponent of microcrystalline silicon thin films decreases with increasing deposition rate, contrary to the initial expectation. This phenomenon is attributed to the differences in surface growth and gas reaction growth processes at different deposition rates. The study provides insights into the growth mechanism of microcrystalline silicon thin films, which could guide the optimization of deposition processes for improved film quality.
研究不足
The study focuses on the effect of deposition rate on the growth mechanism of microcrystalline silicon thin films, but does not explore the optimization of film properties for specific applications. The experimental conditions are limited to two deposition rates, which may not cover the full range of possible deposition conditions.
1：Experimental Design and Method Selection:
The microcrystalline silicon thin films were prepared on glass substrates by VHF-PECVD at 75 MHz and substrate temperatures of approximately 220℃. Two series of films with different deposition rates were prepared.
2：0℃. Two series of films with different deposition rates were prepared. Sample Selection and Data Sources:
2. Sample Selection and Data Sources: The films were prepared on clean glass substrates under different conditions of pressure, power, and silane concentration.
3：List of Experimental Equipment and Materials:
VHF-PECVD system, real-time spectroscopic ellipsometry (RTSE), optical emission spectroscopy (OES), Raman spectrometer.
4：Experimental Procedures and Operational Workflow:
The films were deposited under varying conditions, and their growth processes were monitored using RTSE and OES. The film properties were analyzed post-deposition.
5：Data Analysis Methods:
The data from RTSE and OES were analyzed to understand the film growth mechanism and the effect of deposition rate on film properties.
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