研究目的
To demonstrate the superior performance of a HA metasurface when it operates at the anomalous EOT resonance, exceeding largely the results obtained at the regular EOT in label-free thin-film sensing applications.
研究成果
The study demonstrates the superior performance of HA metasurfaces operating at the anomalous EOT resonance for label-free thin-film sensing applications, improving the FOM by a factor between 2 and 3 compared to the regular EOT resonance. The optimal operation occurs when the analyte is deposited on the non-patterned side of the metasurface.
研究不足
The study is limited to the THz band and focuses on thin-film sensing applications. The performance is affected by fabrication tolerances and the inherent surface roughness and granularities of PP films.
1：Experimental Design and Method Selection
The study involves numerical simulations and experimental measurements to analyze the sensing performance of HA metasurfaces operating in the anomalous EOT regime. The methodology includes the use of Floquet ports and unit cell boundary conditions for modeling the HA metasurface as an infinite array.
2：Sample Selection and Data Sources
The metasurfaces consist of a periodic array of circular holes etched on an aluminum layer laying on polypropylene (PP) slabs of different thicknesses. The sensing performance was evaluated by depositing thin layers of a photoresist material on them.
3：List of Experimental Equipment and Materials
The commercial electromagnetic solver CST Microwave Studio? was used for design and numerical results. The experimental characterization was done on a custom-made terahertz time-domain spectrometer (THz-TDS).
4：Experimental Procedures and Operational Workflow
The structures were fabricated via a standard contact photolithography technique adapted to flexible PP-film substrates. The experimental characterization involved complex transmission measurements within the spectral range of 0.1–2.5 THz.
5：Data Analysis Methods
The performance was assessed in terms of both the amplitude modulation and the frequency shift of the EOT resonance, calculating both the sensitivity and the Figure of Merit (FOM).
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