研究目的
Evaluating the RF performance of Al-rich AlGaN-channel high electron mobility transistors (HEMTs) with 80 nm long gates for power applications, particularly in harsh environments.
研究成果
The Al0.85Ga0.15N/Al0.70Ga0.30N HEMTs with 80 nm gates demonstrated promising RF performance, with a current density exceeding 160 mA/mm, fT of 28.4 GHz, fMAX of 18.5 GHz, and an output power density of 0.38 W/mm at 3 GHz. These results illustrate the potential of Al-rich AlGaN-channel HEMTs for RF applications.
研究不足
The study was limited by the source and drain contacts, which negatively impacted the on-resistance and current density. Additionally, the true potential of the technology was limited by the present drain voltage limitation due to short-channel related loss of electron carrier confinement in the 2DEG.
1：Experimental Design and Method Selection:
The study involved the fabrication and characterization of Al0.85Ga0.15N/Al0.70Ga0.30N HEMTs with 80 nm gates. The methodology included DC and RF performance evaluations.
2：85Ga15N/Al70Ga30N HEMTs with 80 nm gates. The methodology included DC and RF performance evaluations.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: The HEMTs were constructed using conventional rectangular geometry, with specific source-gate and gate-drain spacings. The samples were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates.
3：List of Experimental Equipment and Materials:
The study utilized electron-beam lithography, a low bias F-based dry etch, and Ni/Au gate metal deposition. The epitaxial structure included AlN, AlGaN buffer, and channel layers.
4：Experimental Procedures and Operational Workflow:
The HEMTs were isolated with a BCl3/Cl2 based dry etch. Source and drain electrodes were composed of Nb/Ti/Al/Mo/Au alloyed at 1000°C for 30 s. Gate openings were formed into a 100 nm thick PECVD SiN passivating layer.
5：Data Analysis Methods:
DC transfer characteristics, small-signal S-parameter measurements, and large-signal continuous-wave RF results were analyzed to determine the performance metrics.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
