研究目的
The influence of variation of silicon amount in dc magnetron sputtered Al1-xSixOy films upon their chemical composition, films’ structure, optical and electrical properties were studied.
研究成果
The study concludes that increasing silicon content in Al1-xSixOy films affects their deposition rate, chemical bonds, and decreases optical constants, dielectric constant, loss tangent, and ac conductivity. The films are good candidates for electrical and optical applications due to their insulating properties and the ability to tailor their dielectric constant by adjusting the Al/Si ratio.
研究不足
The study focuses on amorphous films and their properties, which may differ from crystalline counterparts. The range of Al/Si atomic ratios studied is limited to the conditions achievable with the experimental setup.
1：Experimental Design and Method Selection:
The study involved the deposition of Al2O3, Al1-xSixOy, and SiO2 thin films by dc magnetron sputtering onto various substrates to study the influence of Al/Si atomic ratio on their properties.
2：Sample Selection and Data Sources:
Substrates included p-type, B-doped, (100)-oriented Si wafer, glass, and stainless steel (AISI304).
3：4). List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment used included a Shimadzu PC3101 UV–VIS–NIR scanning spectrophotometer for optical measurements, a WAYNE KERR 6440B for capacitance–frequency measurements, and a Kratos AXIS Ultra HAS XPS for XPS analysis.
4：Experimental Procedures and Operational Workflow:
Films were deposited under specific conditions, with variations only in the number of Si pellets on the Al target. Post-deposition, films were analyzed for chemical composition, structure, and morphology using SEM, EDS, RBS, and XPS. Optical and electrical properties were then measured.
5：Data Analysis Methods:
Data were analyzed using SCOUT software for optical constants and thicknesses, and dielectric properties were calculated from capacitance measurements.
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