研究目的
Investigating the electrical properties and band alignment of a-Ir2O3/a-Ga2O3 pn heterojunction diodes.
研究成果
The a-Ir2O3/a-Ga2O3 pn heterojunction diodes showed clear rectifying characteristics with a turn-on voltage of about 2.0 V. The band alignment was found to be a staggered-gap (type-II) with valence- and conduction-band offsets of 3.34 eV and 1.04 eV, respectively. The total barrier height for electrons was about 2.4 eV, agreeing with the turn-on voltage, indicating electrons are mainly responsible for electrical conduction around the turn-on voltage.
研究不足
Potential leakage due to device structure and processes, crystal defects in thin films, and impurities.
1：Experimental Design and Method Selection:
Fabrication of a-Ir2O3/a-Ga2O3 pn heterojunction diodes using mist chemical vapor deposition (CVD) technique. X-ray photoemission spectroscopy (XPS) was used to investigate the band alignment.
2：Sample Selection and Data Sources:
Samples included a-Ga2O3, a-Ir2O3/a-Ga2O3 heterostructures on c-plane sapphire substrates.
3：List of Experimental Equipment and Materials:
Mist CVD system, XPS equipment (ULVAC-Phi MT-5500), sputtering system for electrode deposition.
4：Experimental Procedures and Operational Workflow:
Growth of a-Ir2O3 and a-Ga2O3 layers, fabrication of pn diodes, I-V characteristics measurement, XPS analysis for band alignment.
5：Data Analysis Methods:
Calculation of valence- and conduction-band offsets from XPS data, analysis of I-V characteristics.
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