研究目的
Investigating the role of surface donors at the oxide/semiconductor interface of III-N metal-oxide-semiconductor (MOS) high-electron mobility transistors (HEMTs) in creating a two-dimensional electron gas (2DEG) and its impact on device performance.
研究成果
The study concludes that ionized surface donors in III-N MOS HEMTs behave like a fixed charge, distinguishable from trapping states, and that open-channel drain current is independent of surface donor density. It also suggests that 2DEG can be populated by electrons from surface donors or injecting source contacts, depending on the surface donor density relative to the quantum well polarization charge.
研究不足
The study is limited to specific III-N MOS HEMT structures and may not generalize to all semiconductor interfaces. The role of surface donors and their interaction with polarization charges requires further investigation for broader applicability.
1：Experimental Design and Method Selection:
The study involves the preparation and characterization of Al2O3/GaN/AlGaN/GaN MOS HEMTs with varying oxide thicknesses and post-deposition annealing to modify surface donor density.
2：Sample Selection and Data Sources:
GaN/AlGaN/GaN HEMT heterostructures were grown by MOCVD on sapphire substrates.
3：List of Experimental Equipment and Materials:
Al2O3 dielectric was deposited by MOCVD, and devices were characterized using dc and pulsed I–V measurements with a Keithley 4200 SCS parameter analyzer.
4：Experimental Procedures and Operational Workflow:
Devices underwent standard cleaning, optional post-deposition annealing, and were characterized for their electrical properties.
5：Data Analysis Methods:
Surface donor densities were calculated from threshold voltage dependencies on oxide thickness, and 2DEG densities were extracted from capacitance–voltage measurements.
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