研究目的
To enhance the carrier injection of MoS2 field effect transistors (FETs) by understanding the injection mechanism of metal-MoS2 contacts.
研究成果
F-N tunneling was observed dominating the carrier injection of the MoS2 FETs with Ti electrodes at high bias. In contrast, using Sc as electrodes, the carrier injection of the devices was dominated solely by direct tunneling, indicating the Schottky barrier was almost eliminated. Due to the well-formed Sc-MoS2 Ohmic contact, Sc is proposed as a promising candidate for the S/D electrodes of MoS2 FETs.
研究不足
The study focuses on Ti and Sc electrodes, and the findings may not be directly applicable to other metals. The mechanism of carrier injection for other metals may differ.
1：Experimental Design and Method Selection:
MoS2 FETs with Ti and Sc electrodes were fabricated and characterized to study the carrier injection mechanism from the perspective of tunneling models.
2：Sample Selection and Data Sources:
Few layers of MoS2 flakes were mechanically exfoliated and laid onto a p-type Si wafer capped with thermally-grown 300 nm SiO
3：List of Experimental Equipment and Materials:
Scotch tape for exfoliation, e-beam lithography for patterning, e-beam evaporation for electrode deposition.
4：Experimental Procedures and Operational Workflow:
S/D were patterned using e-beam lithography, and electrodes were deposited using e-beam evaporation.
5：Data Analysis Methods:
The electrical characterization of the devices was analyzed based on tunneling models to clarify the mechanism of carrier injection.
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