研究目的
Investigating the growth of hBN/graphene heterostructures on copper thin films using chemical vapor deposition in a single process.
研究成果
The study successfully demonstrated a single-process CVD growth of hBN/graphene on Cu thin films, revealing that graphene preferentially grows underneath hBN layers. The research highlighted the significant role of H2 in the growth process, affecting both the quality and grain size of the resulting graphene. This work provides a foundation for understanding the growth parameters for producing large-area heterostructures.
研究不足
The study was limited by the thin film Cu substrates, which restricted the temperature used to grow graphene to 900 °C. Additionally, the growth of graphene under hBN layers may be affected by the thickness of the hBN layer, with a critical thickness potentially influencing the growth rate and position of graphene.
1：Experimental Design and Method Selection:
The study utilized a cold-walled CVD reactor with a close-coupled showerhead for the growth of graphene and hBN. The copper thin films were prepared on c-plane sapphire by sputtering.
2：Sample Selection and Data Sources:
The samples were characterized using Raman spectroscopy, atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM).
3：List of Experimental Equipment and Materials:
Equipment included a Renishaw Invia Reflex Raman Microscope, Bruker Dimension FastScan AFM, PerkinElmer Phi 5500 XPS, and JEOL JEM-2800 STEM TEM.
4：Experimental Procedures and Operational Workflow:
The hBN layer was grown using triethylborane (TEB) and ammonia (NH3) as precursors, with H2 as the carrier gas. Graphene was grown from methane (CH4) on hBN/Cu.
5：Data Analysis Methods:
Raman spectroscopy was used to identify the phase, evaluate quality, and estimate the thickness of graphene samples. AFM was used to find the nanoscale roughness and surface uniformity. XPS was implemented to determine the composition and ordering of the films.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容-
Bruker Dimension FastScan
Dimension FastScan
Bruker
Used for atomic force microscopy (AFM) in tapping mode to find the nanoscale roughness and surface uniformity.
立即获取同款设备 -
PerkinElmer Phi 5500
Phi 5500
PerkinElmer
Used for X-ray photoelectron spectroscopy (XPS) to determine the composition and ordering of the films.
暂无现货
预约到货通知
-
JEOL JEM-2800 STEM
JEM-2800 STEM
JEOL
Used for transmission electron microscopy (TEM) to measure exact film thicknesses and layering quality.
暂无现货
预约到货通知
-
FEI Helios Nanolab 650 dual-beam FIB
Helios Nanolab 650
FEI
Used for preparing samples for TEM analysis by cutting out a cross-sectional wedge.
暂无现货
预约到货通知
-
Renishaw Invia Reflex Raman Microscope
Invia Reflex
Renishaw
Used for Raman spectroscopy to identify the phase, evaluate quality, and estimate the thickness of graphene samples.
暂无现货
预约到货通知
-
登录查看剩余3件设备及参数对照表
查看全部
