研究目的
To develop lead-free semiconductor materials by synthesizing and doping germanium halide perovskites for optoelectronic applications.
研究成果
The study successfully synthesized size-tunable CsGeX3 nanocrystals and achieved the first Mn2+ doping into germanium halide perovskites, demonstrating potential for lead-free optoelectronic applications. The findings pave the way for further exploration of lead-free perovskite materials.
研究不足
The study is limited to CsGeX3 (X = I, Br) perovskites; CsGeCl3 synthesis was not successful. Photoluminescence was not observed in CsGeI3 nanocrystals, and the quantum yield for CsGeBr3 was low (0.34%).
1:Experimental Design and Method Selection:
Aqueous synthesis of CsGeX3 (X = I, Br) perovskite nanocrystals with size control via cysteammonium halide ligand concentration variation. Mn2+ doping into the CsGeX3 lattice.
2:Sample Selection and Data Sources:
GeO2 and H3PO2 as Ge(IV) source and chemical reductant, respectively.
3:List of Experimental Equipment and Materials:
SEM, TEM, XRD, EPR spectrometer, diffuse reflectance spectrometer, spectrofluorometer.
4:Experimental Procedures and Operational Workflow:
Synthesis involves reaction of GeO2 with HX to produce GeX4, reduction with H3PO2, and precipitation with CsX. Mn2+ doping introduced via MnO or MnX
5:Data Analysis Methods:
XRD for structural analysis, EPR for Mn2+ doping confirmation, optical characterization for band gap and PL measurements.
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