研究目的
Investigating the impact of different substrates on the performance of a monolayer MoS2 field-effect transistor (FET) by calculating the interface charge density between the MoS2 layer and the substrate.
研究成果
The study concludes that the monolayer MoS2 FET on the h-BN/Si substrate exhibits superior performance, with an on-current of 548 μA/μm and a subthreshold swing of 65 mV/dec, compared to other substrates. This is attributed to the higher interface charge density and effective carrier injection. The findings suggest that substrate engineering can significantly enhance the performance of monolayer MoS2 FETs, opening up possibilities for their use in electronic applications.
研究不足
The study focuses on the impact of different substrates on the performance of a monolayer MoS2 FET but does not explore the effects of varying channel lengths or temperatures. Additionally, the simulations assume ballistic transport, which may not account for all real-world scattering effects.
1：Experimental Design and Method Selection:
The study uses first-principle calculations based on density functional theory to analyze the interface electron density and models the electron transport behavior using the nonequilibrium Green’s function with mode space (NEGF_MS) approach.
2：Sample Selection and Data Sources:
Different substrates, viz. SiO2, HfSiO4, Si3N4, HfO2, and h-BN, are considered for the monolayer MoS2 FET.
3：List of Experimental Equipment and Materials:
The Atomistix ToolKit and Silvaco ATLAS technology computer-aided design (TCAD) software are used for simulations.
4：Experimental Procedures and Operational Workflow:
The interface charge density is extracted and used in numerical simulations to determine the electrical characteristics of the monolayer MoS2 FET.
5：Data Analysis Methods:
The performance of the monolayer MoS2 FET on different substrates is compared based on the extracted interface charge density and electrical characteristics.
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