摘要： Single photon emitters in solid-state systems with superior optical properties are of fundamental importance for they are building block candidates of many quantum optics applications. The ideal qubit will have a bright narrow band emission (i.e. high Debye Waller (DW) factor) and an access to optically read out and manipulate its spin states. Numerous candidates have been studied in diamond including the nitrogen vacancy (NV) center and more recently the silicon vacancy (SiV) center. The advantage of the SiV is its high DW factor, with nearly 80% of its emission is within its zero phonon line (ZPL). But its coherence time is limited by the narrow ground state splitting (~40 GHz) which favors single-phonon absorption from the lower branch to the upper one. This necessitates the search for an alternative system with a larger ground state splitting to suppress the phonon-mediated processes. Color centers in diamond are promising solid-state qubits for scalable quantum photonics applications. Amongst many defects, those with inversion symmetry are of an interest due to their promising optical properties. In this work, we demonstrate a maskless implantation of an array of bright, single germanium-vacancy (GeV) centers in diamond. Employing the direct focused ion beam technique, single GeV emitters are engineered with the spatial accuracy of tens of nanometers. The single GeV creation ratio reaches as high as 53% with the dose of 200 Ge+ ions per spot. The presented fabrication method is promising for future nanofabrication of integrated photonic structures with GeV emitters as a leading platform for spin-spin interactions.