研究目的
Investigating the dependence of short-channel effects on the semiconductor bandgap in tunnel field-effect transistors (TFETs) to understand the impact of bandgap scaling on TFET performance and scalability.
研究成果
The study concluded that the device scalability is poorer with using lower bandgap materials. The variation of drain-induced barrier thinning with scaling the channel length can serve as a good indicator to evaluate the short-channel effect of TFETs for a given bandgap, but its magnitude cannot be used to compare short-channel effects between different bandgap devices. The bandgap dependence of short-channel effects should be properly considered in scaling TFET devices.
研究不足
The study did not include process-sensitive trap-assisted tunneling and the bandgap narrowing due to heavy doping, which may affect the realism of the simulations.
1：Experimental Design and Method Selection:
Two-dimensional simulations based on the nonlocal approach of direct and indirect Kane’s BTBT models were performed to produce electrical characteristics of TFETs. The total tunneling current in TFETs was determined by the BTBT generation rate modeled in the Kane’s formalism.
2：Sample Selection and Data Sources:
Three different bandgap materials including high-bandgap Si (1.12 eV), low-bandgap Ge (0.8 eV) and InAs (0.36 eV) were adopted for the study.
3：12 eV), low-bandgap Ge (8 eV) and InAs (36 eV) were adopted for the study.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: The simulations utilized values of A and B theoretically calculated and experimentally verified for Si, Ge, and InAs. Fermi-Dirac distribution and Shockley-Read-Hall recombination were enabled for realistic simulations.
4：Experimental Procedures and Operational Workflow:
The study examined the current-voltage characteristics of TFETs using Si, Ge, and InAs, with drain voltage scaled in parallel with the bandgap to eliminate ambipolar off-leakage.
5：Data Analysis Methods:
The study analyzed the dependence of short-channel effects on the bandgap by investigating the drain-induced barrier thinning (DIBT) as a function of channel length for Si, Ge, and InAs TFETs.
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