研究目的

To investigate the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si (100) and glass substrates using RF sputtering technique.

研究成果

ZnO thin films were prepared on Si and glass substrates using RF sputtering technique. Deposited films were annealed at different temperatures (300 °C to 600 °C) in order to study the effect of post annealing temperature on deposited films. All deposited films exhibited a strong (002) crystallographic orientation and an increase in grain size with increasing annealing temperature has been observed. Nature of stress for deposited ZnO thin films got shifted from compressive to tensile as annealing temperature has increased from 300 °C to 600 °C. The optical transmittance was found to be more than 85% in visible region for all deposited samples. Optical bandgap has increased at higher annealing temperature. The strong UV-emission of deposited films have confirmed the usability of ZnO thin films in near UV light source applications such as next generation UV lasers.

研究不足

The study focuses on the effect of annealing temperature on structural and optical properties of ZnO thin films. Other parameters such as RF power, deposition time, and substrate type were kept constant, which might limit the comprehensive understanding of ZnO thin film properties under varying conditions.