研究目的
Investigating the effects of post-deposition plasma treatments on the stability of amorphous InGaZnOx thin-film transistors prepared with plasma-assisted reactive magnetron sputtering.
研究成果
The post plasma treatment is effective for improving the stability of IGZO TFTs, comparable to conventional thermal annealing. The stability improvements are attributed to the reduction of defects in the bulk a-IGZO region.
研究不足
The study focused on the stability of IGZO TFTs under specific conditions (40% humidity at room temperature). The effects of other environmental conditions or longer time frames were not investigated.
1：Experimental Design and Method Selection:
The study involved the use of a plasma-assisted reactive magnetron sputtering deposition system for the formation of a-IGZO films. Post-deposition plasma treatments were applied to these films to investigate their effects on the stability of IGZO TFTs.
2：Sample Selection and Data Sources:
As-deposited and post plasma treated IGZO TFTs with mobility over 40 cm2 V?1 s?1 were used for the investigation.
3：List of Experimental Equipment and Materials:
A plasma-assisted reactive magnetron sputtering deposition system, Ar–H2–O2 mixture plasmas, and a semiconductor characterization system (Keithley 4200-SCS) were used.
4：Experimental Procedures and Operational Workflow:
The electrical characteristics of the TFTs were measured after fabrication and after over 400 days under 40% humidity at room temperature. Positive-current-bias instability was examined.
5：Data Analysis Methods:
The threshold voltage Vth of the TFTs was extracted using the transconductance gm liner extrapolation method.
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