研究目的
Investigating the development of a compact model for memristors that unifies drift and diffusion characteristics for application in neuron circuits design.
研究成果
A compact model applicable for both drift and diffusion memristor is presented which can compensate the lack of the diffusion memristor model of neuromorphic device. The model can reproduce the DC and AC characteristics of the device accurately comparable with the measurements of the experiments. The Verilog-A model for SPICE can been used for neuromorphic circuit design. Moreover, it is found that diffusion memristor is more suitable for neuromorphic circuit. The effect from device threshold voltage and parameters variations on the circuit performance were discussed.
研究不足
The paper does not explicitly mention the limitations of the research.
