研究目的
Investigating the characterization technique and EM-model for a thin film BST50 varactor grown on the oxide electrode material SMO, to understand the benefits and limits of this characterization technique and the varactor's performance.
研究成果
The study demonstrates the potential of epitaxially grown BST on SMO for high-performance varactors, with high tunability at low voltage levels and high Q factors. Future work will focus on optimizing the component layout and BST/SMO interface for even better performance.
研究不足
The characterization technique suffers from limited accuracy in Q factor measurements due to the varactor's strong mismatch with the 50 ? port of the VNA. The impact of wafer probes on acoustic resonances and the introduction of a negative inductance during calibration are also noted as limitations.
1：Experimental Design and Method Selection:
The study involves the characterization of a BST50 varactor grown on SMO, using a 3D EM model built with CST MWS for comparison with measurement results.
2：Sample Selection and Data Sources:
The varactor test structure is designed with specific pad sizes and gap widths to extract different material properties. Measurements are conducted on-wafer using GSG probes.
3：List of Experimental Equipment and Materials:
Equipment includes a Vector Network Analyzer (VNA), Impedance Analyzer (ImpA), and a high precision DC source. Materials include BST and SMO thin films.
4：Experimental Procedures and Operational Workflow:
RF data is obtained up to 12 GHz from one-port VNA measurements, with OSL calibration at the wafer prober tip interface. Leakage current is measured using a DC source.
5：Data Analysis Methods:
The effective capacitance, Q factor, ESR, and leakage current are evaluated from the measured S-Parameters. The EM model is used to extract BST material properties and validate measurement results.
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