1：Experimental Design and Method Selection:

The study involved the fabrication of bottom-gate/top-contact-structured In2O3 TFTs using a solution-based deposition process. The electrical stability was evaluated through consecutive TFT operation experiments under vacuum and atmospheric air conditions.

2：Sample Selection and Data Sources:

A p-doped silicon substrate with a 100-nm-thick silicon nitride (SiNx) dielectric layer was used. The In2O3 precursor solution was prepared from indium(III) nitrate hydrate dissolved in 2-methoxyethanol.

3：List of Experimental Equipment and Materials:

Equipment included a field-emission scanning electron microscope (FE-SEM), X-ray diffractometers (XRD), X-ray photoelectron spectroscope (XPS), and a semiconductor parameter analyzer. Materials included indium(III) nitrate hydrate, 2-methoxyethanol, and a p-doped silicon substrate.

4：Experimental Procedures and Operational Workflow:

The substrate was cleaned and treated with oxygen plasma. The In2O3 precursor solution was spin-coated, dried, and thermally annealed. Al source and drain electrodes were deposited, and the TFTs' electrical characteristics were measured.

5：Data Analysis Methods:

The morphological and structural properties of the In2O3 films were analyzed using FE-SEM and XRD. The chemical properties were analyzed using XPS. The electrical characteristics and stability were evaluated using a semiconductor parameter analyzer.