研究目的
To propose a chemical-vapor-deposited (CVD) diamond-based double-drift-region (DDR) impact avalanche transit-time diode (IMPATT) for use in microwave applications, offering better performance compared with other materials.
研究成果
The CVD diamond-based DDR IMPATT proposed in this study offers higher DC-to-RF conversion efficiency, less noise, and higher power density capability compared with other materials like Si, GaAs, and natural diamond. The device shows promising performance at 35.5 GHz, making it advantageous for Ka band applications. Future work could focus on the experimental realization of the proposed design.
研究不足
The study is based on simulations, and there are no available experimental results on CVD diamond-based DDR IMPATT for comparison. The experimental realization of the proposed design would require established fabrication techniques such as diffusion, ion implantation, and molecular beam epitaxy (MBE).
1：Experimental Design and Method Selection:
The study involved designing a DDR IMPATT based on CVD diamond substrate with suitable doping profile and performing numerical simulations to study its performance. The simulations included DC analysis, small-signal analysis, and noise analysis.
2：Sample Selection and Data Sources:
CVD diamond was doped with nitrogen and boron to form regions of n- and p-type semiconductor, respectively. The doping concentrations and materials parameters for the proposed model were specified.
3：List of Experimental Equipment and Materials:
The study utilized numerical simulation techniques without specifying physical equipment, focusing on theoretical models and algorithms.
4：Experimental Procedures and Operational Workflow:
The DC analysis started with simultaneous numerical solution of the Poisson equation and carrier current continuity equation over the double-drift structure of the IMPATT. Small-signal analysis optimized the conductance–susceptance profile, and noise analysis was performed to determine the noise performance.
5：Data Analysis Methods:
The Runge–Kutta method with a double-iterative simulation scheme was used for small-signal analysis to compute parameters such as susceptance, conductance, and diode impedance.
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