摘要： Germanium–silicon (Ge1(cid:1)xSix) or silicon–germanium (SixGe1(cid:1)x) alloy, where x indicates the mole fraction of silicon, is a complete solid-solution semiconductor having the diamond cubic structure. The lattice parameters of the two elements differ by 4% and those of the solid solution closely follow Vegard's law from 0.564 (pure germanium) to 0.534 nm (pure silicon), while the bandgap changes from 0.72 (germanium) to 1.2 eV (silicon) according to composition. GeSi alloys are important for both microelectronic and optoelectronic devices and various functional materials because of the potential for bandgap and lattice parameter engineering they offer. The phase diagram of GeSi alloy is shown in Figure 1. The solidus and liquidus curves are widely separated. The equilibrium distribution coef?cient, k0 ? xs/xl (xs and xl being the solidus and liquidus concentration of silicon), is as large as 6 for germanium-rich solutions and about 2.2 at the average melting-point temperature of each element. Such a large gap between the liquidus and the solidus and the difference in the physical properties of the constituent elements, such as density, lattice parameter, and melting temperature, make the crystal growth of GeSi alloys very dif?cult. This article provides an outline of the applications and reviews the growth of bulk GeSi, discussing relevant problems, residual defects, impurities and dopants, and covers the structural properties of the alloys. The study of such alloys is also of interest from the fundamental view point of solidi?cation.