研究目的
To develop a technique for the observation of individual impact ionization (I.I.) events in Si, aiming to launch research into high-energy collision physics in Si.
研究成果
The proposed method successfully demonstrated the detection of single holes generated by electron-initiated impact ionization in Si at 8 K, with the injection-energy threshold close to the Si bandgap energy. This technique opens new avenues for researching high-energy collision physics in semiconductors.
研究不足
The observable time scale is limited to hundreds of milliseconds due to the small current on the order of tens of pA. The hole detection probability is currently better than 10?4, indicating room for improvement in sensitivity.
1：Experimental Design and Method Selection:
The method involves detecting holes generated by I.I. with single charge sensitivity using a T-shaped device consisting of an electron emitter, a hole detector, and a drain. The device was fabricated on a silicon-on-insulator (SOI) substrate.
2：Sample Selection and Data Sources:
The SOI layer had a boron doping concentration of less than 1015 cm?3. The emitter and detector had narrow and thin constricted channels underneath the gate for sensitive detection.
3：The emitter and detector had narrow and thin constricted channels underneath the gate for sensitive detection.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: The device included emitter-, detector-, and top-gates made of n++ poly Si, with the SOI layer about 20-nm thick except for the constriction parts, which were about 5-nm thick and 20-nm wide.
4：Experimental Procedures and Operational Workflow:
A negative voltage was applied to the emitter lead to inject electrons into the T-branch region. The detector current was recorded as a function of the detector-gate voltage for a constant emitter current.
5：Data Analysis Methods:
The hole-detection and recombination rates were analyzed from the random telegraph signal (RTS) observed in the detector current.
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