研究目的
To investigate the structural and chemical composition changes in In-doped As2Se3 thin films prepared by thermal evaporation, focusing on the formation of InAs nanocrystallites under laser illumination.
研究成果
In-doped As2Se3 films exhibit a gradient of In content decreasing with film depth. Raman spectra indicate the formation of InAs nanocrystallites under laser illumination, facilitated by photoplasticity-induced material mixing. The study provides insights into the structural changes and potential applications of doped chalcogenide glasses.
研究不足
The method of In doping may not be appropriate for obtaining uniform In-doped As2Se3 films, especially for higher In contents, due to the formation of indium clusters in the topmost layer and preferential bonding of In to Se rather than As atoms.
1：Experimental Design and Method Selection:
Thermal evaporation was used to prepare In-doped As2Se3 films. Raman and X-ray photoelectron spectroscopy (XPS) were employed to study the films' structure and composition.
2：Sample Selection and Data Sources:
Films with nominal indium contents up to 7 at.% were prepared on silicon and silicate glass substrates.
3：List of Experimental Equipment and Materials:
Agilent AFM 5420 for AFM measurements, ESCALAB 250Xi XPS Microprobe for XPS studies, Horiba LabRAM HR800 spectrometer for Raman studies.
4：Experimental Procedures and Operational Workflow:
Films were characterized by AFM for surface morphology, XPS for chemical composition, and Raman spectroscopy for structural analysis under varying laser power densities.
5：Data Analysis Methods:
XPS data were analyzed to determine element concentration profiles versus film depth. Raman spectra were analyzed for evidence of structural changes and nanocrystallite formation.
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