1：Experimental Design and Method Selection:

The study involved systematic measurements of charge transport properties under hydrostatic pressures up to 15.1 kbar and perpendicular magnetic fields. The methodology included the use of a two-band semiclassical model for ambient pressure conditions and observations of nonmonotonic pressure dependence of resistivity at elevated pressures.

2：1 kbar and perpendicular magnetic fields. The methodology included the use of a two-band semiclassical model for ambient pressure conditions and observations of nonmonotonic pressure dependence of resistivity at elevated pressures. Sample Selection and Data Sources:

2. Sample Selection and Data Sources: The samples were CdxHg1?xTe/HgTe/CdxHg1?xTe with a 20.5-nm-wide HgTe quantum well, grown by modified MBE technology on (100)-GaAs substrate.

3：5-nm-wide HgTe quantum well, grown by modified MBE technology on (100)-GaAs substrate. List of Experimental Equipment and Materials:

3. List of Experimental Equipment and Materials: A Hall bar was lithographically defined for resistivity tensor measurements. A TiAu film gate electrode was used to vary the density of holes and electrons. Hydrostatic pressure was applied using a BeCu cell of the piston-cylinder type with PES-1 as a pressure-transmitting medium.

4：Experimental Procedures and Operational Workflow:

Resistivity was measured by conventional four probe ac lock-in technique. Pressure values were determined from the superconducting transition of a tin gauge. Magnetoresistance data were symmetrized and antisymmetrized by taking measurements in both magnetic field directions.

5：Data Analysis Methods:

The data were analyzed using the two-band semiclassical model and the Raikh and Glazman model for hopping conduction.