研究目的
Investigating the formation of various phases during the RbF-PDT and the fundamental properties of a thermally co-evaporated RbInSe2 thin film.
研究成果
The study successfully demonstrated the growth of high-quality RbInSe2 thin films by thermal co-evaporation. The good agreement between theoretical predictions and experimentally derived properties of the RbInSe2 thin film supports the hypothesis that interface recombination at the CIGS/CdS junction could be reduced due to the formation of RbInSe2 during an RbF-PDT.
研究不足
The study does not include Ga and Cu in both the calculations and experiment, focusing solely on the Rb-In-Se system. The discrepancy between experimental and computed results could be due to the different concentration of the defects.
1：Experimental Design and Method Selection:
The study combines theoretical and experimental investigations to explore the formation of RbInSe2 thin films and their properties.
2：Sample Selection and Data Sources:
Three different samples were deposited by one-step co-evaporation on different substrates: an In-Se sample, an In-Se sample with a subsequent RbF-PDT, and an Rb-In-Se sample.
3：List of Experimental Equipment and Materials:
Equipment includes a vacuum CIGS deposition system, PANalytical X’Pert Pro MPD diffractometer, Perkin Elmer UV-Vis setup, Hitachi S4100 microscope, Rigaku ZSX Primus II for XRF, and a Raman setup based on S&I components.
4：Experimental Procedures and Operational Workflow:
Samples were prepared under Na-free conditions, with some covered with a SiNxOy diffusion barrier. Deposition processes involved In, Se, and RbF at a substrate temperature of 550°C.
5：Data Analysis Methods:
XRD patterns, UV-Vis measurements, SEM images, XRF spectroscopy, and Raman spectra were analyzed to determine the properties of the thin films.
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