研究目的
Investigating the optical properties of thin films of nanostructured Ge1 ? xSnxSe2.5 (x = 0, 0.3, 0.5) glassy alloys.
研究成果
The optical properties of nanostructured Ge1 ? xSnxSe2.5 (x = 0, 0.3, 0.5) thin films were studied, revealing that refractive index increases and band gap decreases with increasing Sn content. This is attributed to the increase in defect states within the band gap. The study provides insights into the potential applications of these materials in optical devices.
研究不足
The study is limited to the optical characterization of nanostructured Ge1 ? xSnxSe2.5 (x = 0, 0.3, 0.5) thin films. The potential for optimization lies in exploring the effects of varying more parameters such as deposition conditions and annealing temperatures on the optical properties.
1：Experimental Design and Method Selection:
The glassy alloys were prepared using melt quenching technique, and thin films were prepared using physical vapor deposition method.
2：Sample Selection and Data Sources:
The samples were characterized using XRD, EDX, and TEM to confirm their amorphous nature, composition, and nanostructure formation.
3：List of Experimental Equipment and Materials:
Panalytical X’pert Pro X-ray diffractometer, TEM model number Tecnai G2 20 (FEI) S-Twin 200 kV transmission electron microscope, UV–Vis-NIR Spectrophotometer (Agilent Cary 60).
4：0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Films were deposited by passing the LT current to the electrodes in a vacuum chamber maintained at 10?5 torr. Nanorods were grown by pouring liquid nitrogen over the substrate during film deposition.
5：Data Analysis Methods:
Absorption and transmission spectra were analyzed to determine optical constants such as energy band gap, refractive index, extinction coefficient, and dielectric constant.
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