研究目的
Investigating the ultrafast nonlinear optical (NLO) absorption and excited carrier dynamics of layered MoS2 (monolayer, 3?4 layers, and 6?8 layers) via Z-scan and transient absorption spectra.
研究成果
The study reveals layer-dependent NLO response in layered MoS2 films, with potential applications in next-generation optoelectronic and photonic devices. The recovery time of excitonic band decreases with an increase in layers, and the reductive energy of A exciton decreases with an increase in layers at high pump fluence.
研究不足
The defect of the sample may affect the decay time measurements. The study focuses on MoS2 films with specific layer numbers (monolayer, 3?4 layers, and 6?8 layers).
1：Experimental Design and Method Selection:
The NLO absorption and carrier dynamics are characterized by employing open aperture (OA) Z-scan and pump-probe techniques under a femtosecond laser excitation (400 nm and 800 nm).
2：Sample Selection and Data Sources:
MoS2 films are prepared by using the chemical vapor deposition (CVD) process.
3：List of Experimental Equipment and Materials:
Femtosecond laser, Z-scan setup, pump-probe setup.
4：Experimental Procedures and Operational Workflow:
The NLO parameters change accordingly with layer numbers. The decay time is extracted from the pump probe experiments.
5：Data Analysis Methods:
The NLO absorption coefficient (αNL) in the MoS2 films is calculated by combining the experimental data with the Z-scan theory.
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