摘要： A resistive memory device based on the Ag/Bi1+(cid:2)(Fe0(cid:3)95Zn0(cid:3)05)O3/SRO/Pt/TiO2/SiO2/Si(100) structure was prepared using radio frequency magnetron sputtering. The composition of the thin film element was analyzed by X-ray photoelectron spectroscopy and the thickness of the thin film was characterized by scanning electron microscope. Through the electrical test, we found that the device exhibited low operating voltage, which included VSET of about 0.1 V, VRESET of about ?0.1 V, and VF of about 0.25 V. This facilitated the perfect integration of the device with the circuit design. Testing for 10,000 s at a substrate temperature of 85 (cid:3)C, the device showed excellent retention. The I–V fitting curves of the resistive devices were analyzed. The low resistance state was in line with the ohmic mechanism and the high resistance state was in accordance with the Space Charge Limited Current mechanism. The resistance change of the device was attributed to the formation of Ag conductive filaments.