研究目的
Investigating the origin of waveguiding in ultrashort pulse structured silicon.
研究成果
The study reveals that waveguiding in ultrashort pulse laser written structures in bulk silicon is due to highly localized crystal deformations and strain, leading to a positive refractive index change in the range of 10?3.
研究不足
The study is limited to the analysis of waveguides written with specific laser parameters and may not account for all possible variations in laser inscription conditions.
1：Experimental Design and Method Selection:
The study involved the use of an Er-doped fiber laser system for waveguide writing in silicon, followed by Raman microscopy to investigate the structural changes.
2：Sample Selection and Data Sources:
Mono-crystalline silicon samples were used, with waveguides written using specific laser parameters.
3：List of Experimental Equipment and Materials:
Equipment included an Er-doped fiber laser system, a long-distance microscope objective, and an automated 3D positioning system.
4：Experimental Procedures and Operational Workflow:
Waveguides were written by moving the focal region from the backside upward with a writing speed of 20 μm s?
5：After laser inscription, the back surface was polished. Data Analysis Methods:
Raman measurements were analyzed to determine crystal deformations and refractive index changes.
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automated 3D positioning system
ANT 130
Aerotech
Controlling the relative position between sample and objective.
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quartz tungsten-halogen lamp
QTH10
Thorlabs
Illuminating the waveguide end facet from the back.
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Er-doped fiber laser system
Raydiance, Inc.
Used for waveguide writing in silicon.
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long-distance microscope objective
20×, NA = 0.4
Focusing the laser beam into the volume of mono-crystalline silicon.
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Raman microscope
inVia
Renishaw
Performing Raman microscopy at a wavelength of 532 nm.
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