摘要： We propose a diagonal approximation for the self-energy that describes the interaction between electrons and polar optical phonons in the framework of nonequilibrium Green’s function transport simulations. Our model is based on the definition of a scaling factor, which renormalizes the local electron-phonon coupling, to take into account the nonlocality of the interaction and provide the correct scattering rates. While previous studies relied on empirical values of this factor, we derive, from basic physical relationships, analytical expressions in the presence of the one- and two-dimensional confinement of phonons. We apply our model to the self-consistent simulation of double-gate p-type transistors made of technologically relevant III-V materials (InAs, InSb, and GaSb). Their performance is benchmarked, for different crystallographic orientations and strain constraints, against the corresponding Si and Ge devices. We find that the electron-polar optical phonon scattering plays a major role in degrading the performance of the III-V devices and typically results in a widening of the performance gap existing between III-V and Si or Ge devices in ballistic transport conditions.