研究目的
To investigate the role of hetero-Junction (HJ) p-i-n Gate All Around GAA Tunnel FET architecture for biosensing applications.
研究成果
The hetero junction p-i-n GAA TFET shows good sensitivity for both neutral and charged biomolecules, making it suitable for biosensing applications. The device's sensitivity parameters increase with the dielectric constant of the biomolecules, and the Ion/Ioff ratio decreases for neutral biomolecules. The leakage current varies with the charge of the biomolecules, indicating the device's potential for precise biosensing.
研究不足
The study does not consider quantum effects due to the device's radius being above the threshold where such effects become significant. The performance comparison is limited to conventional MOSFETs and does not extensively explore other advanced device architectures.
1：Experimental Design and Method Selection:
The study involves analytical modeling of the hetero-junction GAA TFET for biosensing applications, focusing on surface potential, threshold voltage, and drain current.
2：Sample Selection and Data Sources:
The device architecture is simulated with GaSb in the source region and InAs in the channel-drain regions to create a broken gap configuration.
3：List of Experimental Equipment and Materials:
The simulation uses calibrated model parameters for the electrostatic characteristics of HJ GAA TFET, including constant mobility, Fermi-Dirac model, Kane’s model for band to band tunneling, and Shockley-Read-Hall recombination model.
4：Experimental Procedures and Operational Workflow:
The impact of neutral and charged biomolecules on the device's energy band, potential, threshold voltage, and drain current is analyzed.
5：Data Analysis Methods:
The sensitivity of the device is evaluated based on the shift in threshold voltage when biomolecules are immobilized in the cavity region.
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