研究目的
Investigating the precise control of Cr etching using two atomic layer etching (ALE) methods for applications in semiconductor device fabrication.
研究成果
The study demonstrated that Cr etch depths could be controlled precisely with atomic precision using both chemical and physical anisotropic ALE methods, achieving saturated etch rates of approximately 1.1 ?/cycle and 1.5 ?/cycle, respectively. The methods maintained near-infinite etch selectivities over Si-based materials and preserved the original surface roughness and chemical composition of the Cr surface.
研究不足
The study focuses on Cr etching and its selectivities over Si-based materials. The applicability to other materials and the scalability of the process for industrial applications are not explored.
1：Experimental Design and Method Selection:
Two Cr ALE methods were investigated: chemical anisotropic ALE using O radical adsorption followed by Cl+ ion desorption, and physical anisotropic ALE using Cl/O radical adsorption followed by Ar+ ion desorption.
2：Sample Selection and Data Sources:
A 100-nm-thick Cr thin film on SiO2 wafers was used. Etch depths were measured using a surface profilometer.
3：List of Experimental Equipment and Materials:
Inductively coupled plasma (ICP) ion beam source with a three-grid assembly, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM).
4：Experimental Procedures and Operational Workflow:
Cyclic process involving adsorption and desorption steps with varying parameters like ion energy and exposure time.
5：Data Analysis Methods:
Etch depths were analyzed to determine etch rates and selectivities. Surface roughness and chemical composition were analyzed using AFM and XPS.
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