研究目的
The main purpose of this paper is the study of the early stages of growth at room temperature and the interaction at the interface of ZnO on graphene supported on Cu (G/Cu).
研究成果
The growth of ZnO on HOPG and G/Cu substrates under quasi-equilibrium conditions at room temperature shows completely different kinetics and morphology, despite the identical first atomic layer of both substrates. A model for the growth kinetics on both substrates is proposed, highlighting the crucial role of graphene in creating nucleation centers for ZnO growth.
研究不足
The study is limited by the specific conditions of room temperature growth and the use of graphene supported on Cu and HOPG substrates. The influence of the Cu substrate on the growth model for ZnO on graphene suggests the need for further experiments with different substrates.
1：Experimental Design and Method Selection:
The study involves the reactive thermal evaporation of metallic Zn in an oxygen atmosphere at room temperature to study the early stages of ZnO growth on graphene/Cu and HOPG substrates.
2：Sample Selection and Data Sources:
Graphene supported on polycrystalline copper (G/Cu) and highly oriented pyrolytic graphite (HOPG) were used as substrates.
3：List of Experimental Equipment and Materials:
A Knudsen type evaporator, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used.
4：Experimental Procedures and Operational Workflow:
ZnO was grown by reactive thermal evaporation, with samples analyzed in situ by XPS for each step and ex situ by AFM and SEM for some samples.
5：Data Analysis Methods:
Factor analysis and inelastic peak shape analysis were used for data interpretation.
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