研究目的
To propose a CMOS compatible process for the growth of self-catalyzed InAs nanowires on silicon by molecular beam epitaxy, focusing on the influence of surface preparation under hydrogen and arsenic annealing on the growth mechanisms.
研究成果
The study successfully demonstrates a CMOS compatible process for growing self-catalyzed InAs nanowires on silicon without exceeding the 410 °C thermal limit. The hydrogen preparation and arsenic annealing are crucial for controlling the growth mechanisms and achieving high aspect ratio nanowires. The findings suggest a new method for surface preparation and the possibility of tuning the growth mechanism through different surface terminations.
研究不足
The study is limited to the growth of InAs nanowires on silicon using MBE, with a focus on surface preparation and growth mechanisms. The comparison with MOVPE growth is discussed but not experimentally explored in this study.
1：Experimental Design and Method Selection:
The study involves the growth of self-catalyzed InAs nanowires on silicon using molecular beam epitaxy (MBE), with a focus on surface preparation under hydrogen (gas or plasma) and in-situ arsenic annealing.
2：Sample Selection and Data Sources:
Commercially available 2 inch NID Si(111) wafers from Siltronix were used. The native oxide was removed with hydrofluoric acid (HF 5%) before loading into the MBE chamber.
3：List of Experimental Equipment and Materials:
Solid-source MBE system (RIBER-MBE412), atomic force microscopy (AFM), scanning electron microscopy (SEM, FEI Aztec-600i), transmission electron microscopy (TEM, JEOL 2100F and JEOL Cold FEG probe-corrected ARM200F).
4：Experimental Procedures and Operational Workflow:
Substrates were degassed at 200 °C for 1 h under a hydrogen flux (gas or plasma), then heated to the growth temperature (410 °C) under an arsenic flux. The growth was initiated by opening the In shutter for 1 h.
5：Data Analysis Methods:
Morphological and structural characterizations were performed using SEM and TEM. Statistics on ensemble of nanowires and density functional theory (DFT) calculations were used to analyze the growth mechanisms.
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