研究目的
To design and test a self-powered isolated GaN gate drive circuit for a Phase Shifted Full Bridge DC-DC converter for space applications, addressing the lack of space qualified digital isolators with necessary specifications for isolated GaN gate drivers.
研究成果
The self-powered gate driver for radiation hardened GaN FETs was successfully designed and tested, demonstrating effective operation in a phase-shifted full bridge DC-DC converter. The use of pulse transformers addressed the lack of suitable digital isolators, and adjustments to the design improved dead-time accuracy. Future work could focus on further integration to enhance performance.
研究不足
The accuracy of dead-time intervals for top-side GaN FETs is affected by the fast dV/dt at the switching node, requiring adjustments to the delay capacitor and resistance values. Dead-time accuracy could be further improved by integrating the gate driver and power stage on the same PCB.
1：Experimental Design and Method Selection:
The design involves using pulse transformers for signal isolation and energy transfer to bias GaN gate driver chips. The methodology includes simulations and laboratory testing to validate the design.
2：Sample Selection and Data Sources:
The prototype was tested on a phase shifted full bridge DC converter operating from a 100 V DC bus to deliver a 20 V regulated output at 400 W.
3：List of Experimental Equipment and Materials:
Includes 200 V radiation hardened GaN FETs, pulse transformers, and other components listed in TABLE II.
4：Experimental Procedures and Operational Workflow:
The gate driver prototype was implemented and tested, with procedures including startup and shutdown voltage waveforms verification, gate-source voltage waveforms measurement, and pulse transformer output analysis.
5：Data Analysis Methods:
Experimental results were analyzed to assess the effects of voltage rate of change on dead time accuracy and the performance of the gate driver.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
