研究目的
Investigating the performance of ALD Al2O3-based two-dimensional hole gas diamond MOSFET operating at saturation velocity under high voltage conditions.
研究成果
The ALD-Al2O3 diamond FETs demonstrated high-frequency performance under high voltage conditions, with a carrier velocity approaching the saturation velocity of 1×107 cm/s and a record output power density of 3.8 W/mm at VDS = ?50 V. These findings highlight the potential of diamond FETs for high-power microwave applications.
研究不足
The study focuses on the performance of diamond FETs under high voltage conditions but does not address the potential for further optimization of device structure or materials to enhance performance beyond the reported values.
1：Experimental Design and Method Selection:
The study involved fabricating 0.5-μm-gate-length ALD-Al2O3 2DHG diamond MOSFETs capable of withstanding high voltage and evaluating their small-signal and large-signal performances during high voltage operation (|VDS| up to 60 V).
2：5-μm-gate-length ALD-Al2O3 2DHG diamond MOSFETs capable of withstanding high voltage and evaluating their small-signal and large-signal performances during high voltage operation (|VDS| up to 60 V).
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: Devices were fabricated on a IIa-type polycrystalline diamond substrate with a (110) preferential surface.
3：List of Experimental Equipment and Materials:
A 100-nm-thick atomic-layer-deposited (ALD) Al2O3 film was used as the gate insulator and passivation layer. The gate electrode was defined using electron beam lithography and an Al (100 nm) layer was evaporated and lifted off.
4：Experimental Procedures and Operational Workflow:
The devices were characterized for their drain current-voltage characteristics, small-signal performance (fT and fmax), and large-signal performance (output power density, associated gain, and power added efficiency) under various bias conditions.
5：Data Analysis Methods:
S-parameters were measured on-wafer over the range from 1 GHz to 40 GHz using an Agilent 8722ES vector network analyzer. The large-signal performance was evaluated using a load-pull system at 1 GHz.
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