研究目的
To investigate HgCdSe/ZnTe/Si (211) heterostructures grown by molecular beam epitaxy and to study the effects of chemical etchants for measurements of defect density in the HgCdSe epilayers.
研究成果
Large lattice mismatch at the ZnTe/Si interface was accommodated through {111}-type stacking faults. Initial attempts to delineate individual dislocations using mixtures of nitric, hydrochloric and lactic acids revealed that the etchants successfully attacked defective areas, but many defects were unaffected. Further efforts are needed to develop a reliable etchant for epitaxial MCS films.
研究不足
The etchants successfully attacked defective areas, but many defects were unaffected, indicating the need for further development of reliable etchants for epitaxial MCS films.
1：Experimental Design and Method Selection:
Transmission electron microscopy (TEM) and focused-ion-beam (FIB) milling were used to study the microstructure of HgCdSe/ZnTe/Si heterostructures and the effects of chemical etchants.
2：Sample Selection and Data Sources:
Samples of Hg1-xCdxSe with x ranging from
3：19 to 33 were grown by molecular beam epitaxy (MBE) on Si(211) substrates with ZnTe buffer layers. List of Experimental Equipment and Materials:
FEI Nova200 dual-beam system, Philips FEI CM-200, JEOL JEM-4000EX, and JEOL ARM-200F electron microscopes were used for microstructural characterization.
4：Experimental Procedures and Operational Workflow:
Samples were prepared using standard mechanical polishing and dimpling, followed by Ar-ion milling. Etching solutions based on nitric acid, hydrochloric acid, and lactic acid were tested.
5：Data Analysis Methods:
High-resolution imaging and Fourier image analysis were used to analyze the defects.
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