研究目的
Investigating the spin-dependent transport properties of a Ge-doped InP3 monolayer to achieve fully spin-polarized current and negative differential resistance (NDR) for spintronic nanodevices.
研究成果
The Ge-doped InP3 monolayer exhibits remarkable NDR and perfect spin-filtering effects under small bias voltages. A fully spin-polarized photocurrent can be generated by tuning the photon energy or polarization angle of linearly polarized light, making it a promising candidate for 2D spintronics devices.
研究不足
The study is limited to theoretical calculations and simulations, without experimental validation. The practical application may be constrained by the difficulty in fabricating Ge-doped InP3 monolayers with precise control.
1：Experimental Design and Method Selection:
Density functional theory calculations combined with the nonequilibrium Green’s functions formalism (NEGF-DFT) were used to study the spin-dependent transport properties.
2：Sample Selection and Data Sources:
The Ge-doped InP3 monolayer was selected as the sample.
3：List of Experimental Equipment and Materials:
VASP code for structure optimization and Nanodcal package for quantum transport calculations.
4：Experimental Procedures and Operational Workflow:
The structure was optimized using VASP code, and the electrical current and photocurrent were calculated using the Nanodcal package.
5：Data Analysis Methods:
The electronic transmission function and photocurrent were analyzed based on linear response theory.
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