研究目的
To review the electronic properties of topological insulators, focusing on the structure of edge and bulk states in HgTe-based systems and the interaction with electromagnetic fields leading to photogalvanic effects.
研究成果
The review highlights the stable conducting surface states in topological insulators, their electronic properties, and photogalvanic effects, emphasizing their potential for applications in electronics and optoelectronics. Future work should address challenges in improving electron mobility and understanding scattering mechanisms.
研究不足
The paper is a review, so it does not present new experiments; limitations include reliance on existing literature, potential biases in cited studies, and the focus on HgTe-based systems which may not generalize to other materials.
